tn3019a npn general purpose amplifier this device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 ma and collector voltages up to 80 v. sourced from process 12. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. symbol parameter value units v ceo collector-emitter voltage 80 v v cbo collector-base voltage 140 v v ebo emitter-base voltage 7.0 v i c collector current - continuous 1.0 a t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics ta = 25 c unless otherwise noted symbol characteristic max units tn3019a p d total device dissipation derate above 25 c 1.0 8.0 w mw / c r jc thermal resistance, junction to case 125 c/w r ja thermal resistance, junction to ambient 50 c/w to-226 c b e ? 1997 fairchild semiconductor corporation tn3019a
npn general purpose amplifier (continued) electrical characteristics ta = 25 c unless otherwise noted off characteristics small signal characteristics on characteristics * pulse test: pulse width 300 s, duty cycle 1.0% symbol parameter test conditions min max units v (br)ceo collector-emitter breakdown voltage* i c = 30 ma, i b = 080v v (br)cbo collector-base breakdown voltage i c = 100 c 0.01 10 c i c = 500 ma, v ce = 10 v* i c = 1.0 a, v ce = 10 v* 50 90 100 40 50 15 300 v ce( sat ) collector-emitter saturation voltage i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma 0.2 0.5 v v v be( sat ) base-emitter saturation voltage i c = 10 ma, i b = 15 ma 1.1 v f t current gain - bandwidth product i c = 50 ma, v ce = 10 v, f = 20 mhz 100 mhz c obo output capacitance v cb = 10 v, i e = 0, f = 1.0 mhz 12 pf c ibo input capacitance v be = 0.5 v, i c = 0, f = 1.0 mhz 60 pf h fe small-signal current gain i c = 1.0 ma, v ce = 5.0 v, f = 1.0 khz 80 400 rb ? c c collector base time constant i e = 10 ma, v cb = 10 v, f = 4.0 mhz 400 ps nf noise figure i c = 100 ma, v ce = 10 v, r s = 1.0 k ? , f = 1.0 khz 4.0 db tn3019a
typical characteristics typical pulsed current gain vs collector current 0.1 0.3 1 3 10 30 100 300 1000 0 50 100 150 200 250 300 350 i - collector current (ma) h - typical pulsed current gain c fe 125 c 25 c - 40 c v = 1v ce collector-base and emitter-base capacitance vs reverse bias voltage 0.1 1 10 50 0 20 40 60 80 100 reverse bias voltage (v) capacitance (pf) c cb c eb f = 1.0 mhz collect or-cutoff current vs ambie nt temperature 25 50 75 100 125 0. 1 1 10 t - ambient temperature ( c) i - collector current (na) a cbo v = 80v cb collector-emitt er saturation voltage vs collect or curre nt 0. 1 1 1 0 10 0 1 00 0 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 i - collector current (ma) v - collector emitter voltage (v) c cesat 25 c - 40 c 125 c = 10 base-emitt er saturation voltage vs collect or curre nt 0. 1 1 1 0 10 0 1 00 0 0 0. 4 0. 8 i - collector current (ma) v - base em itte r volta ge (v) c besat = 10 25 c - 40 c 125 c bas e e mitter o n voltage vs collector current 0. 1 1 1 0 10 0 1 00 0 0 0. 2 0. 4 0. 6 0. 8 1 i - collector current (ma) v - b as e emitter on volta ge (v) c beon v = 1v ce 25 c - 40 c 125 c tn3019a npn general purpose amplifier (continued)
typical characteristics (continued) power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 0.25 0.5 0.75 1 temperature ( c) p - power dissipation (w) d o to-226 small signal current gain at 20 mhz 1 10 100 500 0 2 4 6 8 10 i - collector current (ma) h - small signal current gain f = 20 mhz v = 1.0v ce v = 10v ce c fe switching times vs collector current 10 100 500 1000 0 200 400 600 800 1000 i - collector current (ma) time (ns) t f c t d t r t s turn on and turn off times vs collector current 10 100 500 1000 0 200 400 600 800 1000 i - collector current (ma) time (ns) i = i = i v = 50v 10 t off t b1 c b2 cc on c tn3019a npn general purpose amplifier (continued)
test circuit to sampling scope rise time 5.0 ns input z 100 k ? pulse source rise time 5.0 ns fall time 10 ns 1.0 k ? ? ? ? ? - 4.0 v 50 v 50 ? ? ? ? ? r b - 1 f 1.5 s 0 v 10 v r l r b r l i c 314 ? 157 ? 94 ? 150 ma 200 ma 500 ma 330 ? 167 ? 100 ? figure 1: t on , t off test circuit tn3019a npn general purpose amplifier (continued)
to-226ae tape and reel data october 1999, rev. a1 to -226ae packaging conf iguratio n: figur e 1.0 1,500 un its per eo70 box for std option 5eo70boxesper int ermediate box fscint labe l 530mm x 130mm x 83mm intermediate box 7,500 un its maximum per intermediate box for std opt ion fscint barcode label 114mm x 102mm x 51mm eo70 immediate box anti-static bubble sheets (to-226ae ) bulk packing information eol code description leadclip dimension quantity j18z to-18 option std no lead clip 1.0 k / box j05z to-5 option std no lead clip 1.0 k / box no eol code to-226 standard straight no leadclip 1.5 k / box to-226ae tnr/ammo packing inf r omation packing style quantity eol code reel a 2,000 d26z e2,000 d27z ammo m 2,000 d74z p2,000 d75z unit weight = 0.300gm reel weight with components = 0.868 kg ammo weight with components = 0.880 kg max quanti ty per intermediate box = 10,000 units ammo pack option see fig 3.0 for2 ammo pack options bulk option see bulk packing information table 375mm x 267mm x 375mm int ermediate b ox fscint labe l custom ized labe l 333mm x 231mm x 183mm int ermediate b ox fscint labe l custom ized labe l f63tnr barcode label 5 ammo box es per int ermediate box custom ized labe l 327mm x 158mm x 135mm immed iate box lot: cbvk741b019 nsid: pn2222n d/c1: d9842 spec rev: b2 spec: qty: 10000 qa rev: fairchild semiconductor corporation htb:b (fscint) f63tnr labe l custom ized labe l 5 reels per int ermediate box tape and reel option see fig 2.0 for various reeling styles f63tnr label sampl e fscint label sampl e customized label lot: cbvk741b019 fsid: pn222n d/c1: d9842 qty1: spec rev: spec: qty: 2000 d/c2: qty2: cpn: n/f: f (f63tnr)3 ?2000 fairchild semiconductor international
to-226ae tape and reel data, continued october 1999, rev. a1 to-226ae reeling style configuration: figure 2.0 style "a" d26z, d70z (s/h) machine option "a"(h) style "e" d 27z, d71z (s/h) machine option "e"(j) first wire off is emitter (on pkg. 92) adhesive tape is on the top side flat of transistor is on bottom first wire off is col lector adhesive tape is on bottom side flat of transistor is on top order style d75z (p) first wire off is col lector (on pkg. 92) adhesive tape is on the top side flat of transistor is on top first wire off is emitter adhesive tape is on bottom side flat of transistor is on bottom order style d74z (m) to-226ae radial ammo packaging conf iguration: figure 3.0
to-226ae tape and reel data, continued october 1999, rev. a1 item descri ption base of package to lead bend component height lead clinch he ight component base height component alignment (side/ side ) component alignment ( front/back ) component pitch feed hol e pi t ch hole center to first lead hole center to component center lead spread lead thickness cut lead length taped lead lengt h taped lead thickness carrier tape thickness carrier tapewidth hold - down tape width hold - down tape position feed hole position sprocket hole diameter lead spring o ut sym bol b hb ho h1 pd hd p po p1 p2 f1/f2 d l l1 t t1 w wo w1 w2 do s dimension 0.0 98 (ma x ) 1.0 78 (+/- 0 .0 50 ) 0.6 30 (+/- 0 .0 20 ) 0.7 48 (+/- 0 .0 20 ) 0.0 40 (ma x) 0.0 31 (ma x) 0.5 00 (+/- 0 .0 20 ) 0.5 00 (+/- 0 .0 08 ) 0.1 50 (+0.0 09 , -0.01 0 ) 0.2 47 (+/- 0 .0 07 ) 0.1 04 (+/- 0 .010) 0.0 18 (+0.0 02 , -0.00 3) 0.4 29 (ma x) 0.2 09 (+0.0 51 , -0.05 2) 0.0 32 (+/- 0 .0 06 ) 0.0 21 (+/- 0 .0 06 ) 0.7 08 (+0.0 20 , -0.01 9) 0.2 36 (+/- 0 .0 12 ) 0.0 35 (ma x) 0.3 60 (+/- 0 .0 25 ) 0.1 57 (+0.0 08 , -0.00 7) 0.0 04 (ma x) note : all dimensions are in inches. hb h1 ho po p2 p1 f1 do p pd b d l1 l s wo w2 w t t1 hd w1 item descript ion symbol minimum maximum reel diamet er d1 13.975 14.025 ar bo r hol e di a me te r (st andard) d2 1.160 1 .200 (small hole) d2 0.650 0.700 core diameter d3 3.100 3.300 hub recess inner diameter d4 2.700 3.100 hub re cess de pt h w 1 0.370 0.570 flange to flange inner w idth w 2 1.630 1.690 hu b to hu b cente r w idth w 3 2.09 0 note: all dimensions are inches s en si tiv e d ev ice s electrostatic d1 d3 w2 w1 w3 d4 d2 to-226ae tape and reel taping dimension configuration: figur e 4.0 to-226ae reel configuration: figur e 5.0 user directionof feed customized label f63tnr label
to-226ae (fs pkg code 95, 99) to-226ae package dimensions october 1999, rev. a1 1:1 scale 1:1 on letter size paper dimensions shown below are in: inches [millimeters] part weight per unit (gram): 0.300 s0.51-0.36; s0.76- 0.36; s1.40-1.14; s1.40-1.14; s4.70-4.32; s2.41-2.13; s4.45-3.81; 5" typ s1.52-1.02; 2" typ 2" typ s7.73-7.10; s7.87-7.37; s15.61-14.47; s1.65-1.27; 0.51 s0.48-0.30; to-226ae (95,99) 1 99 95 3cb 2bc 1ee pin 3 2 for leadformed option ordering, refer to tape & reel data information. ?2000 fairchild semiconductor international
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher smart start? supersot?-3 supersot?-6 supersot?-8 fastr? globaloptoisolator? gto? hisec? isoplanar? microwire? optologic? optoplanar? pacman? pop? rev. g ? acex? bottomless? coolfet? crossvolt ? dome? e 2 cmos tm ensigna tm fact? fact quiet series? fast syncfet? tinylogic? uhc? vcx? ? ?
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